Refine your search:     
Report No.
 - 
Search Results: Records 1-3 displayed on this page of 3
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Effects of proton irradiation on $$n^{+}p$$ InGaP solar Cells

Dharmarasu, N.*; Khan, A.*; Yamaguchi, Masafumi*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Journal of Applied Physics, 91(5), p.3306 - 3311, 2002/03

 Times Cited Count:25 Percentile:66.97(Physics, Applied)

3MeV proton irradiation effects on InGaP single junction and InGaP/GaAs two junction cells were studied. The degradation of electrocal properties for InGaP cells was smaller than that for InGaP/GaAs cells. The results of the measurement of spectral response showed the large degradation in long wavelength. This indicates that GaAs cell degrades. The Damage coefficient of minority carrier diffusion length was estimated to be 7.9$$times$$10$$^{-5}$$ for InGaP and 1.6$$times$$10$$^{-4}$$ for GaAs. These values of the damage coefficient for InGaP and GaAs are 580 times and 280 times larger than those for InGaP and GaAs irradiated with 1MeV electrons.

Journal Articles

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijunction solar cells

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Yamada, Takashi*; Tanabe, Tatsuya*; Takagishi, Shigenori*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; et al.

Applied Physics Letters, 79(15), p.2399 - 2401, 2001/10

 Times Cited Count:75 Percentile:90.93(Physics, Applied)

The radiation response of 3MeV proton-irradiated InGaP, InGaAsP, and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The degradation of the minority-carrier diffusion length was estimated from the spectral response. The damage coefficient K$$_{L}$$ for 3MeV proton-irradiated InGaP, InGaAsP and InGaAs was also determined. The radiation resistance increases with increase in the function of In-P bonds in those materials. Minority-carrier injection under forward bias is found to cause partial recovery of the degradation on irradiated InGaP and InGaAsP cells.

Journal Articles

Cumulative fatigne damage on fatigue strength of VHTR,S graphite

; ;

Nihon Genshiryoku Gakkai-Shi, 29(12), p.1127 - 1133, 1987/12

 Times Cited Count:1 Percentile:19.35(Nuclear Science & Technology)

no abstracts in English

3 (Records 1-3 displayed on this page)
  • 1