Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Dharmarasu, N.*; Khan, A.*; Yamaguchi, Masafumi*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Journal of Applied Physics, 91(5), p.3306 - 3311, 2002/03
Times Cited Count:25 Percentile:66.97(Physics, Applied)3MeV proton irradiation effects on InGaP single junction and InGaP/GaAs two junction cells were studied. The degradation of electrocal properties for InGaP cells was smaller than that for InGaP/GaAs cells. The results of the measurement of spectral response showed the large degradation in long wavelength. This indicates that GaAs cell degrades. The Damage coefficient of minority carrier diffusion length was estimated to be 7.910 for InGaP and 1.610 for GaAs. These values of the damage coefficient for InGaP and GaAs are 580 times and 280 times larger than those for InGaP and GaAs irradiated with 1MeV electrons.
Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Yamada, Takashi*; Tanabe, Tatsuya*; Takagishi, Shigenori*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; et al.
Applied Physics Letters, 79(15), p.2399 - 2401, 2001/10
Times Cited Count:75 Percentile:90.93(Physics, Applied)The radiation response of 3MeV proton-irradiated InGaP, InGaAsP, and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The degradation of the minority-carrier diffusion length was estimated from the spectral response. The damage coefficient K for 3MeV proton-irradiated InGaP, InGaAsP and InGaAs was also determined. The radiation resistance increases with increase in the function of In-P bonds in those materials. Minority-carrier injection under forward bias is found to cause partial recovery of the degradation on irradiated InGaP and InGaAsP cells.
; ;
Nihon Genshiryoku Gakkai-Shi, 29(12), p.1127 - 1133, 1987/12
Times Cited Count:1 Percentile:19.35(Nuclear Science & Technology)no abstracts in English